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inchange semiconductor product specification silicon pnp power transistors 2SB860 description ? ? with to-220c package ? complement to type 2sd1137 applications ? low frequency power amplifier tv vertical deflection output applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -100 v v ceo collector-emitter voltage open base -100 v v ebo emitter-base voltage open collector -4 v i c collector current -4 a i cp collector current-peak -5 a t a =25 ?? 1.8 p c collector power dissipation t c =25 ?? 40 w t j junction temperature 150 ?? t stg storage temperature -45~150 ??
inchange semiconductor product specification 2 silicon pnp power transistors 2SB860 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-50ma; r be = ?t -100 v v (br)ebo emitter-base breakdown votage i e =-1ma; i c =0 -4 v v cesat collector-emitter saturation voltage i c =-1 a;i b =-0.1 a -1.0 v i ceo collector cut-off current v ce =-80v; r be = ?t -100 ? i ebo collector cut-off current v eb =-3.5v; i c =0 -50 ? h fe-1 dc current gain i c =-0.5a ; v ce =-4v 50 250 h fe-2 dc current gain i c =-50ma ; v ce =-4v 25 350
inchange semiconductor product specification 3 silicon pnp power transistors 2SB860 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.10 mm)
inchange semiconductor product specification 4 silicon pnp power transistors 2SB860

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